Very deep PI masked Ti etchTitanium (Ti) Etching

Ti may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

Process Specification

  PlasmaPro 80 Cobra65 PlasmaPro100 Cobra180
Etch rate: > 200nm/min
Uniformity: < ± 5 %
Selectivity to PI: > 1:1
Wafer size: Up to 2" Up to 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


Related Process Techniques