Anisotropic nanoscale TiN etching ( 90 nm line) Courtesy of AMO Aachen*Titanium Nitride (TiN) ICP Etching

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300 PlasmaPro 100 Polaris
Etch rate > 100 nm/min > 200 nm/min
Selectivity to HSQ >2:1 >1:1 PR
Selectivity of gate SiO2 Up to 80:1 in overetch step NM
Uniformity < ± 3 % < ± 5 %
Wafer size Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.