W etch at room temperature 88° profile at 150 nm/ min PR mask (stripped)Tungsten (W) Etching

W may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: > 100 nm/min Contact us for data
Uniformity: < ± 5 % Contact us for data
Selectivity to PR: > 3:1 Contact us for data
Selectivity to SiO2: > 6:1 Contact us for data
Wafer size: Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

    

Related Process Techniques

Congratulations to Dr Kate A. Ross for winning the 2018 Lee Osheroff Richardson (LOR) Science Prize for North and S… https://t.co/5GEVpMSy6K
5:11 PM - 20 Feb 18
View more of our tweets