W etch at room temperature 88° profile at 150 nm/ min PR mask (stripped)Tungsten (W) Etching

W may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: > 100 nm/min Contact us for data
Uniformity: < ± 5 % Contact us for data
Selectivity to PR: > 3:1 Contact us for data
Selectivity to SiO2: > 6:1 Contact us for data
Wafer size: Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


Related Process Techniques