Tungsten Silicide (WSi) EtchTungsten Silicide (WSi) Etch

WSi may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

Process Specification

  PlasmaPro 80 Cobra65 PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: > 200nm/min
Uniformity: < ± 5 % Contact us for data
Selectivity to PR: > 1:1 Contact us for data
Wafer size: Up to 2" Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


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