Via hole etched in BCB. Couresty of FhG IAF FreiburgBenzocyclobutene (BCB) Etching

BCB has applications in the fabrication of gallium arsenide integrated circuits, bumping and redistributing GaAs chips and for planarization and isolation in flat-panel displays. It may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: > 200nm/min
Uniformity: < ± 2.5 % < ± 5 %
Selectivity to PR: > 0.5:1
Selectivity to oxide: > 4:1
Selectivity to Al: > 30:1
Wafer size: Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

    
    

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