Vertical 7µm deep polyimide structures etched by ICP using a metal mask.Polyimide (PI) ICP Etching

PI may be dry etched using Inductively Coupled Plasma (ICP) etch. The process is very clean and will only require very occasional plasma cleaning.

  PlasmaPro 100 Cobra180
Etch rate: >1µm/min
Uniformity:    < ± 5% (7mm edge excl)
Selectivity to Al, Cr, Ti: > 30:1
Selectivity to silylated PR: > 15:1
Wafer Size:   Up to 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Polyimide (PI) ICP Etching for Failure Analysis

Polyimide (PI) ICP Etching for Failure Analysis

PI has applications can be used for Failure Analysis. It has excellent process repeatability and clean removal of a wide range of materials is possible, without lifting of metal tracks.

  PlasmaPro 133 Cobra380
Etch rate: >800nm/min (average)
Uniformity: < ± 6%
Selectivity to SiNx: > 5:1
Wafer size: Up to 300mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Related Tools

PlasmaPro 800 large capacity open load RIE

PlasmaPro 800 large capacity open load RIE

Large capacity open-loading process solutions for reactive ion etch

PlasmaPro 100 RIE System

PlasmaPro 100 RIE System

Delivers anisotropic dry etching for an extensive range of processes

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 offers advanced plasma etch and deposition solutions on one platform with loadlock or cassette to cassette for RIE, ICP etch, ICP CVD and PECVD, upto 200mm single wafer platforms or multi-wafer batch capability.

PlasmaPro 80 Cobra compact ICP etch tool

PlasmaPro 80 Cobra compact ICP etch tool

Compact open-loading tool for plasma etch

Dr Ziad Melhem of Oxford Instruments NanoScience will be giving a talk at MIT on the enabling technologies, require… https://t.co/MDz2SojzYv
5:21 PM - 16 Feb 18
View more of our tweets