Micro-machined SOI gyroscope fabricated using deep silicon etching Bosch Deep Silicon Etching (DSiE)

  • High rate, high selectivity deep silicon etch process using alternating deposition and etch steps
  • Applicable to silicon, silicon-on-insulator (SOI) and silicon on glass

Process specification

  PlasmaPro 80 PlasmaPro 100
  Cobra65 Cobra180 Cobra300 Estrelas
Rate:  Up to > 2 µm/min Up to > 10 µm/min Up to > 25 µm/min
Uniformity: < ± 5% < ± 3%
Type of etch:   Anisotropic
Aspect ratio: Up to 25:1 Up to 30:1 Up to 60:1
Selectivity to PR: Up to > 50:1 Up to > 125:1 Up to > 250:1
Wafer size: Up to 2" Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


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