Cryogenic Deep Si trench arraySi Cryo Etch (DSiE)

  • Deep Si etching using a simple and extremely clean plasma chemistry at cryogenic temperatures
  • Vertical features with smooth sidewalls

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300 PlasmaPro 100 Estrelas
Rate:  up to > 5 µm/min
Uniformity: < ± 5%
Type of etch:   Anisotropic or Sloped
Aspect ratio: up to 30:1
Selectivity to PR: up to > 100:1
Wafer size: up to 100mm up to 200mm

 *Up to 150mm wafer size

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Nanoscale Cryo Silicon (Si) Etching

Nanoscale cryo Si etch with 50nm trenchesNanoscale Cryo Silicon (Si) Etching

  • Nanoscale Si etching using simple and extremely clean plasma chemistry at cryogenic temperatures
  • Offers a unique combination of rate, selectivity and high aspect ratio capability at the nanoscale
  • Features from 10nm to 500nm

Process specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300 PlasmaPro 100 Estrelas
Rate:  up to > 0.5 µm/min
Uniformity: < ± 5% < ± 5%*
Type of etch:   Anisotropic or Sloped
Aspect ratio: up to 30:1
Selectivity to PR: Up to > 10:1
Wafer size: Up to 100mm Up to 200mm

*Up to 150mm wafers

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Related Process Techniques

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