34nm polySi gates stopping on 3nm SiO2Silicon Hydrogen Bromide (HBr) based Selective Silicon Etching

Si may be dry etched using HBr based selective silicon etching with the Inductively Coupled Plasma (ICP) process technique.

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate:      > 100 nm/min
Uniformity: < ±5%
Selectivity to PR: > 2:1
Selectivity to SiO2: > 100:1
Selectivity to HSQ: > 50:1
Wafer Size: up to 100mm up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


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