(CHF3) WaveguidesSilicon (Si) Mixed Etching

Continuously passivating Si etch offering smooth sidewalls in a low etch rate, low selectivity and low aspect ratio process. Also suitable for nanoscale etching.

Process specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300 PlasmaPro 100 Estrelas
Rate:  up to > 5 µm/min
Uniformity: < ± 5%
Type of etch:   Anisotropic or Sloped
Aspect ratio: Up to 7:1
Selectivity to PR: Up to > 10:1
Wafer size: Up to 100mm Up to 200mm

*Up to 150mm wafer size

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


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