Anisotropic F Etching into a Si / SiGe / Si Heterostructure.Image courtesy of the Ruhr University Bochum Lehrstuhl für Elektronische BauelementeSilicon Germanium (SiGe) Etching

SiGe may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Rate:  Up to > 100 nm/min
Type of etch:   Anisotropic
Selectivity to PR: Up to > 100:1
Selectivity to SiO2: Up to > 500:1
Wafer size: Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Related Process Techniques