Dense Bush Carbon Nanotubes by CVD (Side view) (Catalyst: 5nmNi /TiN/Ti/Si)Growth of Aligned Carbon Nanotubes (CNT)

The growth of carbon nanotubes involves preparation of catalyst and growth step, and is related to the catalyst and growth conditions.

Temperature >800°C
Process gas C2H2 , CH4, H2, Ar
Cleaning gas O2 (Allowable for process)
Growth pressure Up to 5000 mTorr
Catalyst guide 5nmNi (or 1nmFe) /TiN/Ti/Si (Example)
Growth rate >50nm/min

Process features:

  • Plasma can be used as the pre-treatment step to facilitate or activate the catalyst particles
  • The properties of carbon nanotubes, such as the diameter and density can be controlled through the choice of the suitable catalyst and process conditions. The growth rate and uniformity of the carbon nanotubes is also related to the choice of catalyst and process conditions.
  • Load-locked system offers higher throughput, as no cooling of the growth chamber is required to exchange samples
  • The He purge gas is required for the process
  • The catalyst may be vapour generated from solid or liquid precursor through additional delivery line, not included
  • The morphology of carbon nanotubes is high density (dense bush style) depending on the catalyst

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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Nanoscale Growth

Nanoscale Growth

CVD, PECVD and ICP CVD for growth of nanomaterials

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