Graphene domains growing on copper substrates. (Growth arrested before film completion to visualize domains in SEM)Growth of  Graphene

Graphene growth obtained through Chemical Vapour Deposition (CVD) processes.

Process features
  • Load-locked system offers higher throughput, as no cooling of the growth chamber is required to exchange samples
  • He purge gas is required for the process
  • The presence of graphene layer(s) will be tested by Raman Spectrosocpy peak 2D analysis. The sample may have 2 or more than 2 layer graphene

Growth of Monolayer Graphene

Example Raman spectrum of the graphene sample (I2D/IG >2)Monolayer Graphene

This specification is issued for graphene obtained through Chemical Vapour Deposition (CVD) processes.

  Nanofab
Temperature >800°C
Process gas C2H2 , CH4, H2  NH3
Cleaning gas O2
Growth Pressure Up to 5000mTorr
Catalyst/substrate Ni (Cu) foil, or sputtering film of Cu (Ni)
  • Load-locked system offers higher throughput, as no cooling of the growth chamber is required to exchange samples
  • He purge gas is required for the process
  • The presence of graphene layer(s) will be tested by Raman Spectrosocpy peak 2D analysis
  • 1 layer graphene will be confirmed by Raman Spectroscopy

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Growth of Vertical Graphene

Top down view of vertical graphene grown on TiN, scale bar is 100nmGrowth of Vertical Graphene

Vertical graphene obtained through Plasma-enhanced Chemical Vapour Deposition (PECVD) processes.

Process Specification
  Nanofab
Temperature >700°C
Process gas CH4, C2H2, H2  NH3, Ar
Cleaning gas O2
Growth Pressure <200mTorr
Catalyst/substrate Si, TiN/SiO2/Si

Process features

  • Load-locked system offers higher throughput, as no cooling of the growth chamber is required to exchange samples
  • He purge gas is required for the process
  • Nucleation depends on the underlying substrate and C-source combination (Carbon, 2013, Vol. 58, 59–65)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

PECVD of nanocrystalline graphene on dielectric substrates

Photo of 150mm wafer with NCG film.  British penny shown for size comparison  (Courtesy of University of Southampton)Direct growth of nanocrystalline graphene on dielectric substrates using plasma enhanced chemical vapour deposition

Process specification

Temperature Up to 1000˚C
Process gas CH4, H2, Ar
Cleaning gas O2
Growth pressure Up to 5Torr
Catalyst/substrate SiO2 (as the example)

Raman spectra of NCG on thermally grown SiO2, sapphire and quartz glass.

Related Process Techniques

Nanoscale Growth

Nanoscale Growth

CVD, PECVD and ICP CVD for growth of nanomaterials

Related Tools

Nanofab

Nanofab

Controllable growth of nanotubes and nanowires with flexible temperature up to 1200°C

Dr Ziad Melhem of Oxford Instruments NanoScience will be giving a talk at MIT on the enabling technologies, require… https://t.co/MDz2SojzYv
5:21 PM - 16 Feb 18
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