Photo of 150mm wafer with NCG film.  British penny shown for size comparison  (Courtesy of University of Southampton)Direct growth of nanocrystalline graphene on dielectric substrates using plasma enhanced chemical vapour deposition

Process specification

Temperature Up to 1000˚C
Process gas CH4, H2, Ar
Cleaning gas O2
Growth pressure Up to 5Torr
Catalyst/substrate SiO2 (as the example)

Raman spectra of NCG on thermally grown SiO2, sapphire and quartz glass.

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