Example Raman spectrum of the graphene sample (I2D/IG >2)Monolayer Graphene

This specification is issued for graphene obtained through Chemical Vapour Deposition (CVD) processes.

  Nanofab
Temperature >800°C
Process gas C2H2 , CH4, H2  NH3
Cleaning gas O2
Growth Pressure Up to 5000mTorr
Catalyst/substrate Ni (Cu) foil, or sputtering film of Cu (Ni)
  • Load-locked system offers higher throughput, as no cooling of the growth chamber is required to exchange samples
  • He purge gas is required for the process
  • The presence of graphene layer(s) will be tested by Raman Spectrosocpy peak 2D analysis
  • 1 layer graphene will be confirmed by Raman Spectroscopy

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.