Top down view of vertical graphene grown on TiN, scale bar is 100nmGrowth of Vertical Graphene

Vertical graphene obtained through Plasma-enhanced Chemical Vapour Deposition (PECVD) processes.

Process Specification
Temperature >700°C
Process gas CH4, C2H2, H2  NH3, Ar
Cleaning gas O2
Growth Pressure <200mTorr
Catalyst/substrate Si, TiN/SiO2/Si

Process features

  • Load-locked system offers higher throughput, as no cooling of the growth chamber is required to exchange samples
  • He purge gas is required for the process
  • Nucleation depends on the underlying substrate and C-source combination (Carbon, 2013, Vol. 58, 59–65)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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