(Top) SEM image of hBN crystals on Ni substrate.  The growth was stopped before formation of continuous film to observe nucleation and growth (Red arrows indicate growth directions)  (Bottom) Raman shiftGrowth of Hexagonal Boron Nitride (hBN)

This specification is issued for Boron Nitride obtained through Chemical Vapour Deposition (CVD) processes. For the purpose of process demonstration, B2H6 is used as Boron source and NH3 as the Nitrogen sources on Cu/Ni foils as catalyst substrates.

Process Specification
Temperature >900°C
Process gas B2H6, NH3, H2, Ar
Cleaning gas H2
Growth pressure Up to 5Torr
Catalyst/substrate Ni (Cu) foil

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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