Ion Source

  • Leading ion source and grid set technology
  • Grids are designed to suit specific applications: high uniformity, high rate, & low energy
  • Specific deposition grid sets to suit multiple targets, offer superior utilisation of target material
  • A full range of etch source options up to 30cm
  • Dual beam configurations (etch plus deposition source) offer the possibility to add capping layer immediately after etch, without exposing the process chamber or wafer to atmosphere
  • Increased deposition rates by using etch source as a plasma radical source (IASD)