PlasmaPro 133 Cobra380 ICP etch tool for up to 300mm Failure Analysis (FA)

Inductively Coupled Plasma (ICP) etch tool for FA processing

  • The PlasmaPro 133 Cobra380 380mm ICP etch source is optimised for wafer sizes up to 300mm
  • The ICP module delivers high density plasmas at low pressure and DC bias enabling fast, low damage etching with excellent profile control.

PlasmaPro 133 single & multi-wafer RIE for DLC

Reactive Ion Etching (RIE) large area deposition of high quality DLC films

The PlasmaPro 133 DLC tool has up to 270mm capability, offering excellent uniformity and exceptional performance for both production and research & development.

Product features:
  • Up to 300mm single wafer load
  • Excellent uniformity
  • Wide temperature range substrate electrodes:
    -120°C to 350°C
  • Options of a 8- or 12-line gas pod provide flexibility in processes and process gases
  • Gas pod may be remotely sited in the service area, away from the main process tool
  • Endpoint detection by laser interferometry and/or optical emission spectroscopy can be fitted to enhance etch control
  • Up to 200mm pumping port for high gas conductance – aiding chamber cleanliness
  • Electrodes available for temperatures from -120ºC to +350ºC
  • Optional helium backside cooling, with mechanical clamping
  • Optional chamber wall heating and liners reduce cleaning requirements, and increases uptime



Tool Support

Service & Support Contracts

Service & Support Contracts

Tailored service contracts: choose options that suit you

Watch our latest webinar On Demand to find out ‘How Ion Beam Deposition enables high power lasers’…
11:45 AM - 23 Mar 18
View more of our tweets