Silicon drift detector for TEM X-Max 80TThe X-MaxN range of SDD for TEM exploits a new sensor chip, new electronics, and innovative packaging to deliver a truly ‘next generation’ SDD performance.

X-MaxN TEM detectors use the latest low noise detector designs for excellent resolution and sensitivity – even at high count rates.


Specially designed for routine TEM applications, the large-area 80 mm2 sensor of the X-MaxN 80 T provides superb solid angle and analytical performance.

  • Designed to maximise throughput and low energy sensitivity
  • Excellent resolution with guaranteed Mn specification at 50,000 cps
  • Optimised take-off angle for best peak-to-background ratios and light element detection
  • Proven performance on all classes of TEM including field emission, aberration corrected microscopes
  • Count rates conducive to acquiring X-ray maps quickly, including real-time background removal and peak deconvolution using AZtecTEM TruMap software

X-MaxN 80 T General Features

Using a large sensor means:

  • Productive count rates at low beam currents
  • Maximising imaging performance and accuracy
  • No need to change imaging conditions for X-ray analysis
  • Significantly higher count rates at the same beam current
  • Shorter acquisition times
  • Better statistical confidence
  • Practical analysis with small beam diameters
  • Maximising spatial resolution
  • Getting the best out of your high resolution TEM


Size matters, sensitivity counts

Under the same operating conditions, bigger detectors:

  • Will do in seconds what used to take minutes – mapping can be an everyday tool
  • Will dramatically improve precision for the same acquisition time

Large Area detectors – high-speed microanalysis is routine for all.


Low energy spectra easily identifiedLow energy matters, sensitivity counts

X-MaxN 80 T is optimised for low energy performance – no compromise on size. 

  • Be detection guaranteed on all detectors, Si Ll can be mapped

Very Large Area detectors – low energy analysis is practical for all.

Size matters, spatial resolution counts

High spatial resolution conditions give low X-ray yield.

  • Large area detectors collect high quality low energy spectra in practical time scales
  • Nanoscale features can be better characterised

Very Large Area detectors – advanced nanoanalysis is possible for all.

Brochure and TEM Explained

AZtecTEM solutions brochure

A 16 page brochure showing why AZtecTEM is the most powerful solution for EDS on the TEM. It comprises software and hardware sections (inc X-Max 100TLE and X-Max TSR).

PDF 4.63MB
Semiconductor analysis in the TEM

Development and testing of semiconductor devices requires extensive knowledge of local structure and elemental composition. With feature sizes of <5 nm, it is often necessary to perform imaging and EDS analysis in a S/TEM.

Once in the TEM, there are still many difficulties to be overcome to acquire accurate elemental maps. Elemental analysis of semiconductors is typically difficult due to strong overlaps of X-ray lines between commonly used elements and low concentrations of dopants. Not only are concentrations of dopants small but their X-ray lines often overlap with other materials used in semiconductor processing. This brief shows how AZtecTEM solves these overlaps to achieve an accurate elemental analysis.

PDF 3.27MB
Simultaneous EDS & EELS in the TEM

In Transmission Electron Microscopy (TEM) there are two ‘go to’ techniques for elemental analysis: Energy Dispersive X-ray Spectroscopy, (EDS), and Electron Energy Loss Spectroscopy, (EELS). Simultaneous acquisition of both signals is a powerful tool for materials analysis...

PDF 4.26MB
EDS for TEM Explained

This 12 page document gives an introduction to EDS applications in the Transmission Electron Microscope (TEM). It covers the theory of the SDD operation and X-ray analysis.

This document is available in bulk free of charge to universities and other institutions giving a course on the subject.

PDF 4.04MB

TEM Lamella Preparation App. Note

TEM Lamella Preparation Application Note

High-resolution TEM image quality is greatly impacted by the thickness of the TEM sample (lamella) and the presence of any surface damage layer created during FIB-SEM sample preparation. Here we present a new technique that enables measurement of the local thickness and composition of TEM lamellae and
discuss its application to the failure analysis of semiconductor devices.

PDF 4.77MB

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SDD Detector for TEM - X-MaxN 100TLE

SDD Detector for TEM - X-MaxN 100TLE

Our flagship SDD detector for TEM, the X-MaxN 100TLE provides the perfect solution for field emission and abberation corrected TEMs working at the frontiers of nanoscience.

Silicon Drift Detector for TEM - X-MaxN TSR

Silicon Drift Detector for TEM - X-MaxN TSR

X-MaxN TSR is Silicon Drift Detector for TEM applications and provides a large solid angle for conventional 200kV TEMs.

Product Support

Maintenance and Support

Maintenance and Support

Oxford Instruments takes pride in the support and service that we provide. Whether your requirements are general or specific, regional or national, local or international, we can tailor a package specifically for you.

Quantitative Analysis Training Courses

Quantitative Analysis Training Courses

A one-day practical course full of hints and tips to get the best from quantitative analysis. Illustrated using AZtec and INCA software, but suitable for users of any EDS system.