Autoprobe lorem1OmniProbe nanomanipulators for FIB and SEM have led the industry since 1995. Multiple models are available to cover a range of budgets and applications.

Affordable choices ranging from open-loop to closed-loop feedback and from servo motor to piezo technology make it possible for every lab to realize the benefit of in situ nanomanipulation.  All products are supported by Omniprobe’s expert applications knowledge in TEM lamella prep solutions and other manipulation tasks.

Renowned for their effectiveness and ease of implementation and use, with an OmniProbe nanomanipulator you can:

  • Neutralise highly charging areas on uncoated insulating specimens
  • Measure electrical parameters of nanostructures (EBIC, EBAC, electrical probing)
  • Execute FIB lift-out solutions for plan-view and backside milling
  • Make correlative TEM and atom probe nanowire samples in the SEM
  • Create high quality samples for improved TEM, EDS and other types of analysis
  • Perform lift-out on cryo samples

The OmniProbe is a port-mounted solution driven through a PC interface.  It's always there when you need it -  and out of the way when you don’t. It takes advantage of the full microscope functionality, including full stage tilt and use of other mounted accessories. Omniprobe nanomanipulators use a unique approach to assist with the 3D manipulation of objects which results in easier manipulation and higher success rates.


OmniProbe Nanomanipulator Family

This brochure compares the three nanomanipulators in the OmniProbe range.

PDF 2.26MB

This brochure goes into the features and benefits of our flagship nanomanipulator, the OmniProbe400.

PDF 2.48MB
EBIC and EBAC analysis

The E3 quantitative nanoprobing microanalysis system enables the electrical characterisation (EBIC, EBAC and Electrical probing) of devices and materials in the SEM & FIB. This 8 page brochure gives an overview of the E3 product.

PDF 9.22MB

Application Note

TEM Lamella Preparation Application Note

High-resolution TEM image quality is greatly impacted by the thickness of the TEM sample (lamella) and the presence of any surface damage layer created during FIB-SEM sample preparation. Here we present a new technique that enables measurement of the local thickness and composition of TEM lamellae and
discuss its application to the failure analysis of semiconductor devices.

PDF 4.77MB