Endpoint detectors are an important tool for achieving optimal process results.

Upgrade now and benefit from the following:

  • Allows a precise stop on a particular layer, improving throughput and yield
  • Ideal for full wafer or batch endpointing
  • Enables monitoring of chamber condition and process ‘health’
  • Also recommended for endpointing of chamber cleans

Optical emission spectroscopy

  • Optical emission spectroscopy monitors the light emitted by the plasma.
  • Etch by-products and gas species have characteristic emission wavelengths, so process endpoints can be detected by looking for changes in these emissions as the etch reaches a new layer.
  • OES endpointing typically requires an etched area of several cm2 to provide a detectable concentration of etched species to the plasma, depending also on etch rate and plasma emission intensity. See table overleaf for typical OES options.
  CCD1 SD 1024G
Applications General purpose endpointing & chamber monitoring. Demanding endpoints: Low open areas, low intensity plasmas. Production users.
Interfacing Integrated to OIPT software Standalone PC with dedicated endpoint software, interfaced to OIPT PC for recipe selection and endpoint triggering.
Benefits Low cost, small footprint. High sensitivity detector. Enhanced spectrum logging and run-to-run
Exposed area requirements* Typically requires several cm2, i.e. usually full wafers with a good exposed area Typically requires a few cm2 (depending on etch rate and plasma intensity). In some cases ≤1cm2
Detector Range 200-850nm 200-800nm
Pixels 3648 pixels 2048 pixels
Signal-to-noise ratio 300:1 (at full signal) 2000:1 (at full signal)
A/D resolution 16 bit 16 bit
Dark noise 50 RMS counts 2 RMS counts
Resolution ~1.5-2.3nm FWHM <2nm FWHM

* Exposed area requirements will be higher than stated for low rate, low intensity plasmas, e.g. low power RIE, or for species with weak emissions.

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OES Endpoint Detector Upgrade

Upgrade for etch tools using Optical Emission Spectroscopy

PDF 1.75MB

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